Datasheet > RB751

RB751

更新时间： 2024-09-23 22:24:23

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
2页	65K
描述
Schottky barrier diode

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中文翻译

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数据手册

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RB751 数据手册

RB751S-40 / RB751V-40

Diodes

Schottky barrier diode

RB751S-40 / RB751V-40

!Applications

High speed switching

For Detection

!External dimensions (Units : mm)

RB751S-40

CATHODE MARK

!Features

1) Small surface mounting type.

(EMD2, UMD2)

2) Low reverse current and low

forward voltage.

0.12±0.05

0.3±0.05

0.8±0.05

0.6±0.1

ROHM : EMD2

EIAJ : SC-79

JEDEC : SOD-523

3) High reliability.

RB751V-40

CATHODE MARK

!Construction

Silicon epitaxial planar

+0.1

−0.05

+0.1

0.3±0.05

1.25±0.1

0.1

0.3±0.05

0.1

−0.05

1.25±0.1

+0.2

−0.1

+0.2

0.7

−0.1

ROHM : UMD2

EIAJ : SC-76

JEDEC : SOD-323

∗ There are two different markings.

!Absolute maximum ratings (Ta = 25°C)

Parameter

Peak reverse voltage

DC reverse voltage

Mean rectifying current

Peak forward surge current

Junction temperature

Storage temperature

* 60 Hz for 1

Symbol

Limits

Unit

VRM

˚C

FSM

200

125

Tstg

−40~+125

˚C

!Electrical characteristics (Ta = 25°C)

Parameter

Forward voltage

Symbol

Min.

Typ.

−

Max.

Unit

Conditions

−

0.37

0.5

−

I = 1mA

Reverse current

−

µA

= 30V

Capacitance between terminals

Note) ESD sensitive product handling required.

2.0

= 1V, f = 1MHz

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