Datasheet > RB751G-40

RB751G-40

更新时间： 2024-10-29 03:02:51

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	229K
描述
Schottky barrier diode

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中文翻译

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数据手册

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RB751G-40 数据手册

RB751G-40

Diodes

Schottky barrier diode

RB751G-40

zApplications

zExternal dimensions (Unit : mm)

zLand size figure

General rectification

0.5

0.13±0.03

0.6±0.05

zFeatures

1) Small power mold type.

(VMD2)

2) Low V

VMD2

3) High reliability

zStructure

0.27±0.03

0.5±0.05

zConstruction

Silicon epitaxial planar

ROHM : VMD2

dot (year week factory)

zTaping dimensions (Unit : mm)

0.18±0.05

φ1.5+0.1

ꢀꢀꢀꢀꢀ0

2±0.05

4±0.1

φ0.5

0.3

4±0.1

2±0.05

0.76±0.1

0.65±0.05

zAbsolute maximum ratings (Ta=25°C)

Parameter

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Limits

Symbol

V_RM

V_R

Unit

Average rectified forward current

Forward current surge peak （60Hz・1cyc）

Junction temperature

200

125

I_FSM

℃

Storage temperature

-40 to +125

Tstg

℃

zElectrical characteristic (Ta=25°C)

Parameter

Forward voltage

Symbol

Min.

Typ.

Max.

Unit

Conditions

V_F

I_R

I_F=1mA

V_R=30V

0.37

0.5

Reverse current

µA

Capacitance between terminals

V_R=1V , f=1MHz

Rev.B

1/3

12 3 4

中文翻译

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