Datasheet > RB751S-40

RB751S-40

更新时间： 2024-11-19 06:07:11

品牌	Logo	应用领域
商升特 - SEMTECH		二极管光电二极管局域网
页数	文件大小	规格书
3页	219K
描述
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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RB751S-40 数据手册

RB751S-40

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

for high speed switching and detection applications

PINNING

Features

DESCRIPTION

Cathode

• Small surface mounting type

• Low reverse current and low forward voltage

• High reliability

Anode

Top View

Marking Code: "D"

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

Reverse Voltage

V_RM

V_R

I_O

Mean Rectifying Current

Peak Forward Surge Current (

Junction Temperature

)

I_FSM

T_j

200

60 Hz, 1 Cycle

125

Storage Temperature Range

T_s

- 40 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

Typ.

Max.

Unit

Forward Voltage

at I_F= 1 mA

V_F

I_R

0.37

0.5

Reverse Current

at V_R= 30 V

µA

Capacitance Between Terminals

at V_R= 1 V, f = 1 MHz

C_T

Note: ESD sensitive product handling required.

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 23/11/2006

12 3

中文翻译

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