Datasheet > RB751S-40

RB751S-40

更新时间： 2023-12-06 20:09:18

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	190K
描述
肖特基二极管

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RB751S-40 数据手册

RB751S-40

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

for high speed switching and detection applications

DESCRIPTION

Cathode

Features

Anode

• Small surface mounting type

• Low reverse current and low forward voltage

• High reliability

Top View

Marking Code: "D"

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

V_RM

V_R

Reverse Voltage

Average Forward Rectifying Current

Peak Forward Surge Current (8.3 ms )

Junction Temperature Range

Storage Temperature Range

I_F(AV)

I_FSM

T_j

℃

200

- 55 to + 125

T_stg

℃

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

V_F

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 10 µA

Forward Voltage

at I_F= 1 mA

0.37

0.5

Reverse Current

at V_R= 30 V

I_R

µA

Capacitance Between Terminals

at V_R= 1 V, f = 1 MHz

C_T

1 / 3

Dated : 29/05/2020 Rev: 03

12 3

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