Datasheet > RB751S

RB751S

更新时间： 2024-10-30 01:25:23

品牌	Logo	应用领域
竹懋 - CITC		光电二极管
页数	文件大小	规格书
3页	148K
描述
30mA Surface Mount Small Signal Diodes

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中文翻译

获取价格

数据手册

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RB751S 数据手册

RB751S

30mA Surface Mount Small Signal Diodes

■ Features

■ Outline

• Low current rectification and high speed switching.

• Extremely small surface mount type.

SOD-523

• Silicon epitaxial planar chip, metal silicon junction.

• Suffix "G" indicates Halogen-free part, ex.RB751SG.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

0.028(0.70)

0.020(0.50)

Marking code

■ Mechanical data

0.051(1.30)

0.043(1.10)

0.067(1.70)

0.059(1.50)

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-523

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

• Polarity : Indicated by cathode band

• Weight : Approximated 0.002 gram

Dimensions in inches and (millimeters)

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Symbol

RB751S

Parameter

Marking code

UNIT

V_RM

V_R

Maximum Recurrent Peak Reverse Voltage

Continuous reverse voltage

V_F

0.37

^OC/W

^OC

Maximum Instantaneous Forward Voltage@1mA DC

Power Dissipation

P_D

150

R_θJA

T_J

Thermal resistance

Operating Temperature

Storage temperature

junction to ambient

520

-40 ~ +125

^OC

T_STG

Parameter

Conditions

Symbol

MIN.

TYP.

MAX.

UNIT

Mean rectifying current

I_O

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

200

0.5

V_R= 30V DC

I_R

Reverse current

V_R= 1V DC, f = 1MHz

C_T

Capacitance between terminals

Document ID : DS-22K1D

Issued Date : 2010/05/05

Revised Date : 2012/05/31

Revision : C

12 3

中文翻译

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