Datasheet > RB751S-40_1

RB751S-40_1

更新时间： 2024-11-19 06:07:11

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	185K
描述
Schottky barrier diode

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中文翻译

获取价格

数据手册

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RB751S-40_1 数据手册

RB751S-40

Diodes

Schottky barrier diode

RB751S-40

zApplications

zExternal dimensions (Unit : mm)

zLand size figure

Low current rectification

0.8±0.05

0.12±0.05

0.8

zFeatures

1) Ultra small mold type. (EMD2)

2) Low V

3) High reliability

EMD2

zConstruction

zStructure

0.3±0.05

0.6±0.1

Silicon epitaxial planar

ROHM : EMD2

JEDEC :SOD-523

JEITA : SC-79

dot (year week factory)

zTaping specifications (Unit : mm)

0.2±0.05

φ1.5±0.05

2.0±0.05

4.0±0.1

0.2

φ0.5

4.0±0.1

2.0±0.05

0.95±0.06

空ポケット

Empty pocket

0.76±0.05

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak 60Hz 1cyc

）

200

I_FSM

（

・

Junction temperature

Storage temperature

125

℃

-40 to +125

Tstg

zElectrical characteristic (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

0.37

0.5

Unit

Conditions

Forward voltage

V_F

I_R

I_F=1mA

V_R=30V

Reverse current

µA

Capacitance between terminsls

V_R=1V , f=1MHz

Rev.B

1/3

12 3 4

中文翻译

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