Datasheet > RB751S-40-AH

RB751S-40-AH

更新时间： 2024-11-18 14:54:27

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	229K
描述
肖特基二极管

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中文翻译

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RB751S-40-AH 数据手册

RB751S-40-AH

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

Features

DESCRIPTION

Cathode

• Small surface mounting type

• Low reverse current and low forward voltage

• High reliability

Anode

• AEC-Q101 Qualified

• Halogen and Antimony Free(HAF), RoHS compliant

Top View

Marking Code: "D"

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25 )

℃

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

V_RM

V_R

Reverse Voltage

Average Forward Rectifying Current

I_F(AV)

I_FSM

T_j

℃

Peak Forward Surge Current (8.3 ms )

Junction Temperature Range

Storage Temperature Range

200

- 55 to + 125

T_stg

℃

Characteristics at T_a= 25

Parameter

Reverse Breakdown Voltage

℃

Symbol

V_(BR)R

V_F

Min.

Typ.

Max.

Unit

at I_R= 10 µA

Forward Voltage

at I_F= 1 mA

0.37

0.5

Reverse Current

at V_R= 30 V

I_R

µA

Capacitance Between Terminals

at V_R= 1 V, f = 1 MHz

C_T

1 / 3

Dated: 13/07/2021 Rev: 01

12 3

中文翻译

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