Datasheet > RB751S-40_11

RB751S-40_11

更新时间： 2024-11-17 09:37:51

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	1044K
描述
Schottky barrier diode

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RB751S-40_11 数据手册

Data Sheet

Schottky barrier diode

RB751S-40

Applications

Dimensions(Unit : mm)

Land size figure(Unit : mm)

Low current rectification

0.8±0.05

0.12±0.05

0.8

Features

1) Ultra small mold type. (EMD2)

2) Low V^F

3) High reliability

EMD2

Construction

Silicon epitaxial planar

Structure

0.3±0.05

0.6±0.1

ROHM : EMD2

JEDEC :SOD-523

JEITA : SC-79

dot (year week factory)

Taping specifications(Unit : mm)

0.2±0.05

φ1.5±0.05

2.0±0.05

4.0±0.1

φ1.55±0.05

0.2

φ0.5

4.0±0.1

2.0±0.05

0.95±0.06

0.90±0.05

空ポケット

Empty pocket

0.76±0.05

0.75±0.05

Absolute maximum ratings(Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average retified forward current

Forward currnt surge peak(60Hz/1cyc)

Junction temperature

°C

I_FSM

200

125

Storage temperature

-40 to +125

Tstg

Electrical characteristics(Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

V_F

I_R

Forward voltage

0.37

0.5

I_F=1mA

V_R=30V

Reverse current

μA

Capacitance between terminals

V_R=1V , f=1MHz

www.rohm.com

1/3

2011.03 - Rev.C

12 3 4

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