Datasheet > RB751S-40C2

RB751S-40C2

更新时间： 2022-04-23 23:00:11

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RB751S-40C2 数据手册

Spec. No. : C345C2

Issued Date : 2003.12.11

Revised Date :

CYStech Electronics Corp.

Page No. : 1/3

Small Signal Schottky diode

RB751S-40C2

Description

Planar silicon Schottky barrier diode encapsulated in a SOD-523 plastic SMD package.

Features

•Extremely small surface mounting type.(SC-79/SOD523)

•Low reverse current and low forward voltage

•High reliability

Applications

Low current rectification and high speed switching

Symbol

Outline

RB751S-40C2

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature Tstg .................................................................................................... -45~+125°C

Junction Temperature Tj .............................................................................................................. +125°C

• Maximum Voltages and Currents (Ta=25°C)

Peak Reverse Voltage V^RM…………………………………………………………………………. 40 V

DC Reverse Voltage V^R...................................................................................................................... 30 V

Mean Rectifying Current I^F........................................................................................................... 30 mA

Peak Forward Surge Current I^{FSM…………………………………..}……………………………………….200 mA

RB751S-40C2

CYStek Product Specification

12 3

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