Datasheet > RB751S40T1/D

RB751S40T1/D

更新时间： 2024-11-17 23:32:11

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RB751S40T1

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RB751S40T1/D 数据手册

RB751S40T1

Schottky Barrier Diode

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

http://onsemi.com

• Extremely Fast Switching Speed

• Extremely Low Forward Voltage - 0.28 Volts (Typ) @ I = 1 mAdc

• Low Reverse Current

• Lead-Free Plating

40 V SCHOTTKY

BARRIER DIODE

CATHODE

ANODE

MAXIMUM RATINGS

Rating

Peak Reverse Voltage

Symbol Value

Unit

Reverse Voltage

Vdc

Electrostatic Discharge

HBM Class: 1C

MM Class: A

SOD-523

CASE 502

PLASTIC

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

MARKING DIAGRAM

Total Device Dissipation FR-5 Board,

200

(Note 1) T = 25°C

Derate above 25°C

1.57

635

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

Junction and Storage

Temperature Range

T , T

-55 to

+150

stg

5E = Specific Device Code

= Date Code

1. FR-5 Minimum Pad

ORDERING INFORMATION

Device

Package

Shipping

RB751S40T1

SOD-523

4 mm Pitch

4000/Tape & Reel

RB751S40T5

SOD-523

2 mm Pitch

8000/Tape & Reel

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

July, 2003 - Rev. 1

RB751S40T1/D

12 3 4

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RB751S40T5G	ONSEMI	获取价格	30 mA, 30 V, Schottky Barrier Diode
RB751S40TD	ONSEMI	获取价格	Schottky Barrier Diode
RB751S-40TE61	ROHM	获取价格	Schottky barrier diode
RB751S-40-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.03A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC
RB751S-40V	RECTRON	获取价格	Reverse Voltage Vr : 40 V;Forward Current Io : 0.03 A;Max Surge Current : 0.2 A;Forward Vo
RB751S40X	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY DIODES
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