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RB751S40-Q PDF预览

RB751S40-Q

更新时间: 2024-12-01 11:13:35
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安世 - NEXPERIA /
页数 文件大小 规格书
7页 166K
描述
Schottky barrier diodeProduction

RB751S40-Q 数据手册

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RB751S40-Q  
Schottky barrier diode  
23 November 2022  
Product data sheet  
1. General description  
Planar Schottky barrier diode with an integrated guard ring for stress protection, in an ultra small,  
flat lead SOD523 (SC-79) Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
Low forward voltage  
Low capacitance  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Ultra high-speed switching  
Voltage clamping  
Line termination  
Reverse polarity protection  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
IF  
Parameter  
Conditions  
Min  
Typ  
Max  
120  
40  
Unit  
mA  
V
forward current  
-
-
-
-
VRRM  
repetitive peak reverse  
voltage  
VF  
forward voltage  
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;  
pulsed; Tamb = 25 °C  
-
-
370  
mV  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
cathode[1]  
anode  
Simplified outline  
Graphic symbol  
K
A
K
A
2
1
2
sym001  
SC-79 (SOD523)  
[1] The marking bar indicates the cathode.  
 
 
 
 
 
 

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