Datasheet > RB751S-30

RB751S-30

更新时间： 2024-11-17 03:02:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		肖特基二极管
页数	文件大小	规格书
3页	125K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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RB751S-30 数据手册

BL Galaxy Electrical

Production specification

Schottky Barrier Diode

RB751S-30

FEATURES

Lead-free

Low reverse current and low forward

voltage.

High reliability.

Small surface mounting type.

APPLICATIONS

SOD-523

Low current rectification and high speed switching.

ORDERING INFORMATION

Type No.

Marking

Package Code

RB751S-40

SOD-523

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

Unit

DC reverse voltage

V_R

Mean rectifying current

Peak forward surge current

Junction temperature

Storage temperature

I_O

℃

I_FSM

T_j

200

125

T_stg

-40-125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Min.

Typ.

Max.

0.37

0.5

Unit

Conditions

I_F=1mA

Forward voltage

Reverse current

V_F

I_R

μA

V_R=30V

Capacitance between terminals

C_T

V_R=1V,f=1MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSKD011

Rev.A

www.galaxycn.com

12 3

中文翻译

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