Datasheet > RB751G-40_11

RB751G-40_11

更新时间： 2022-11-17 00:25:54

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	998K
描述
Schottky barrier Diode

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RB751G-40_11 数据手册

Data Sheet

Schottky barrier Diode

RB751G-40

Applications

Dimensions(Unit : mm)

Land size figure (Unit : mm)

0.5

General rectification

0.13±0.03

0.6±0.05

Features

1) Small power mold type.(VMD2)

2) Low V^F

3) High reliability

VMD2

Construction

Silicon epitaxial planar

Structure

0.27±0.03

0.5±0.05

ROHM : VMD2

dot (year week factory)

Taping specifications(Unit : mm)

0.18±0.05

φ1.5+0.1

ꢀꢀꢀꢀꢀ0

2±0.05

4±0.1

φ0.5

0.3

4±0.1

2±0.05

0.76±0.1

0.65±0.05

Absolute maximum ratings(Ta=25°C)

Parameter

Limits

Symbol

V_RM

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

V_R

Average rectified forward current

Forward current surge peak (60Hz・1cyc)

Junction temperature

I_FSM

°C

200

125

Storage temperature

40 to 125

Tstg

Electrical characteristics(Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

V_F

I_R

Forward voltage

0.37

0.5

I_F=1mA

V_R=30V

Reverse current

μA

Capacitance between terminals

V_R=1V , f=1MHz

www.rohm.com

1/3

2011.05 - Rev.B

12 3 4

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