RB751CS-40T2R

更新时间： 2024-10-29 12:35:31

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
6页	394K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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RB751CS-40T2R 数据手册

Schottky Barrier Diode

RB751CS-40

Datasheet

lApplication

lDimensions (Unit : mm)

lLand size figure (Unit : mm)

Low current rectification

0.16±0.05

0.55

0.6±0.05

lFeatures

1) Ultra Small mold type

(VMN2)

VMN2

Low V_F

lStructure

Cathode

0.156

3) High reliability

0.37±0.03

0.35±0.1

ROHM : VMN2

dot (year week factory)+day

lConstruction

Anode

Silicon epitaxial planar

lTaping specifications (Unit : mm)

lAbsolute maximum ratings (Ta= 25°C)

Parameter

Symbol

V_RM

V_R

Limits

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak (60Hz・1cyc)

Junction temperature

°C

I_FSM

200

125

Storage temperature

Tstg

-40 to +125

lElectrical characteristics (Ta = 25°C)

Parameter

Conditions

I_F=1mA

Symbol Min. Typ. Max.

Unit

V_F

I_R

Forward voltage

0.37

0.5

V_R=30V

Reverse current

V_R=1V, f=1MHz

Capacitance between terminals

www.rohm.com

2013.04 - Rev.B

1/5

12 3 4 5 6

中文翻译

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