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RB751G-40 PDF预览

RB751G-40

更新时间: 2024-10-29 09:37:51
品牌 Logo 应用领域
美微科 - MCC 整流二极管肖特基二极管
页数 文件大小 规格书
3页 114K
描述
40 Volts Schottky Barrier Diode

RB751G-40 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:SOD包装说明:R-PDSO-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.56Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e0元件数量:1
端子数量:2最大输出电流:0.03 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
认证状态:Not Qualified表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

RB751G-40 数据手册

 浏览型号RB751G-40的Datasheet PDF文件第2页浏览型号RB751G-40的Datasheet PDF文件第3页 
M C C  
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TM  
RB751G-40  
Micro Commercial Components  
Features  
x
Low Voltage, Low Inductance  
High Current Rectifier Schottky Diode  
For Power Supply  
40 Volts  
Schottky Barrier Diode  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Lead Free Finish/RoHS Compliant("P" Suffix  
designates RoHS Compliant. See ordering information)  
Marking: 5  
SOD-723  
Maximum Ratings  
A
B
Symbol  
VRM  
VR  
IO  
IFSM  
TJ  
Parameter  
Peak Reverse Voltage  
DC Reverse Voltage  
Mean Rectifying Current  
Peak Forward Surge Current  
Junction Temperature  
Rating  
40  
30  
30  
200  
125  
Unit  
V
V
mA  
mA  
R
C
E
TSTG  
Storage Temperature  
-40 to +125  
R
F
D
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
Forward Voltage  
(IF=1mAdc)  
Reverse Current  
(VR=30Vdc)  
Capacitance between Terminals  
(VR=1V, f=1MHz)  
VF  
IR  
---  
---  
---  
---  
---  
2
0.37  
0.5  
---  
Vdc  
uAdc  
pF  
DIMENSIONS  
CT  
INCHES  
MIN  
MM  
DIM  
A
MAX  
MIN  
1.30  
0.90  
0.55  
0.525  
0.25  
0.08  
MAX  
1.50  
1.10  
0.65  
0.65  
0.35  
0.15  
NOTE  
.051  
.035  
.022  
.021  
.010  
.003  
.059  
.043  
.026  
.026  
.014  
.006  
B
C
D
E
F
www.mccsemi.com  
Revision:5  
2010/01/29  
1 of 3  

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