Datasheet > RB751G-40

RB751G-40

更新时间： 2024-10-29 03:02:51

品牌	Logo	应用领域
TRSYS		二极管
页数	文件大小	规格书
2页	99K
描述
Schottky barrier Diodes

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中文翻译

获取价格

技术参数
数据手册

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RB751G-40 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.73
Base Number Matches：	1

RB751G-40 数据手册

SOD-723

RB751G-40 Schottky barrier Diodes

FEATURES

ꢀ

Small surface mounting type

Low reverse current and low forward voltage

High reliability

MARKING: 5

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃

Parameter

Peak reverse voltage

Symbol

V_RM

V_R

Limits

Unit

DC reverse voltage

Mean rectifying current

Peak forward surge current

Junction temperature

Storage temperature

I_O

℃

I_FSM

T_j

200

125

T_stg

-40~125

℃

Electrical Ratings @T_A=25℃

Parameter

Symbol

Min.

Typ.

Max. Unit

Conditions

I_F=1mA

Forward voltage

V_F

I_R

0.37

0.5

Reverse current

μA

V_R=30V

Capacitance between terminals

C_T

V_R=1V,f=1MHZ

中文翻译

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