Datasheet > RB751CS-40

RB751CS-40

更新时间： 2024-10-30 14:55:47

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	108K
描述
肖特基二极管

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RB751CS-40 数据手册

RB751CS-40

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

• Small surface mounting type

• Low forward voltage

• High reliability

Anode

Transparent top view

Marking Code: 5

Simplified outline DFN1006-2B and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

V_R

Value

Unit

Peak Reverse Voltage

Reverse Voltage

Average Rectified Forward Current

Peak Forward Surge Current (60 Hz for 1 Cyc.)

Junction Temperature

I_F(AV)

I_FSM

T_j

℃

200

125

Storage Temperature Range

T_stg

- 40 to + 125

℃

Characteristics at T_a= 25℃

Parameter

Symbol

Typ.

Max.

Unit

Forward Voltage

at I_F= 1 mA

V_F

I_R

0.37

0.5

Reverse Current

at V_R= 30 V

µA

Capacitance Between Terminals

at V_R= 1 V, f = 1 MHz

C_T

1 / 3

Dated: 26/02/2021 Rev: 05

12 3

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