Datasheet > RB060M-30_09

RB060M-30_09

更新时间： 2024-09-08 06:07:07

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	207K
描述
Schottky barrier diode

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RB060M-30_09 数据手册

Schottky barrier diode

RB060M-30

●Applications

●Dimensions (Unit : mm)

●Land size figure

General rectification

0.1±0.1

ꢀꢀꢀ 0.05

1.6±0.1

1.2

●Features

1) Small power mold type.(PMDU)

2) Low I^R

3) High reliability

PMDU

●Construction

0.9±0.1

Silicon epitaxial planar

●Structure

0.8±0.1

ROHM : PMDU

JEDEC :SOD-123

Manufacture Date

●Taping dimensions (Unit : mm)

0.25±0.05

φ1.55±0.05

2.0±0.05

4.0±0.1

φ1.0±0.1

1.81±0.1

1.5MAX

●Absolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak (60Hz/1cyc)

Junction temperature

I_FSM

150

℃

Storage temperature

-55 to +150

Tstg

(*1)Tc=65℃ MAX. Mounted on epoxy board. 180°Half sine wave

●Electrical characteristic (Ta=25°C)

Parameter

Forward voltage

Conditions

Symbol

V_F1

Min.

0.32

0.36

Typ.

0.4

Max.

Unit

I_F=1.0A

I_F=2.0A

V_R=30V

0.45

0.49

V_F2

0.44

Reverse current

I_R

µA

C=200pF , R=0Ω

forward and reverse : 1 time

ESD break down voltage

ESD

www.rohm.com

2009.02 - Rev.C

1/3

12 3 4

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