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RB061US-30 PDF预览

RB061US-30

更新时间: 2024-10-30 09:38:03
品牌 Logo 应用领域
罗姆 - ROHM 肖特基二极管
页数 文件大小 规格书
5页 1114K
描述
Schottky Barrier Diode

RB061US-30 数据手册

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Data Sheet  
Schottky Barrier Diode  
RB061US-30  
Applications  
Dimensions (Unit : mm)  
Land size figure (Unit : mm)  
General rectification  
Features  
1)Small power mold type. (TSMD8)  
2)Low VF  
3)High reliability  
TSMD8  
Structure  
(7) (6) (5)  
(8  
ROHM : TSMD8  
Manufacture Date  
Silicon epitaxial planer  
Structure  
1pin mark  
1234)  
Taping dimensions (Unit : mm)  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
30  
Symbol  
VRM  
VR  
Unit  
V
Reverse voltage (repetitive)  
Reverse voltage (DC)  
30  
V
Average rectified forward current (*1)  
Forward current surge peak (60Hz1cyc) (*1)  
Junction temperature  
2
Io  
IFSM  
Tj  
A
8
A
125  
°C  
°C  
-
+
Storage temperature  
Tstg  
40 to 125  
(*1)Mounted on epoxy board. 180° Half sine wave  
Electrical characteristics (Ta=25°C)  
Parameter  
Symbol  
VF1  
VF2  
IR  
Min.  
Typ.  
0.30  
0.35  
280  
80  
Max.  
0.35  
0.40  
900  
-
Unit  
V
Conditions  
IF=1.0A  
IF=2.0A  
VR=15V  
-
-
-
-
-
Forward voltage  
V
Reverse current  
μA  
pF  
ns  
VR=20V, f=1MHz  
IF=0.5A, IR=1A, Irr=0.25*IR  
Capacitance between terminal  
Reverse recovery time  
Ct  
trr  
-
20  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.09 - Rev.A  
1/4  

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