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RB068L100DD PDF预览

RB068L100DD

更新时间: 2024-11-02 11:08:19
品牌 Logo 应用领域
罗姆 - ROHM 肖特基二极管
页数 文件大小 规格书
8页 2188K
描述
车载肖特基二极管

RB068L100DD 数据手册

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RB068L100DD  
Schottky Barrier Diode  
(AEC-Q101 qualified)  
Data sheet  
Outline  
V
100  
2
V
A
A
R
I
o
I
110  
FSM  
Features  
Inner Circuit  
High reliability  
Small power mold type  
Super low I  
R
Application  
Packaging Specifications  
Packing  
General rectification  
Embossed Tape  
Reel Size(mm)  
Taping Width(mm)  
Quantity(pcs)  
180  
12  
1500  
TE25  
22  
Structure  
Silicon epitaxial planar  
Taping Code  
Marking  
(T =25ºC unless otherwise specified)  
Absolute Maximum Ratings  
c
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Symbol  
Conditions  
Duty0.5  
Limits  
100  
100  
Unit  
V
V
V
RM  
V
Reverse direct voltage  
R
Glass epoxy mounted  
I
60Hzhalf sin waveformresistive load、  
Average rectified forward current  
Peak forward surge current  
2
A
A
o
T =147Max.  
c
60Hzhalf sin waveformNon-repetitive、  
I
110  
FSM  
one cycleT =25℃  
a
T
T
stg  
Junction temperature  
Storage temperature  
-
-
175  
-55 175  
j
(T =25ºC unless otherwise specified)  
Characteristics  
j
Parameter  
Forward voltage  
Symbol  
Conditions  
Min. Typ. Max. Unit  
V
I =2A  
F
-
-
0.79  
V
F
I
R
Reverse current  
V =100V  
R
-
-
3
μA  
Attention  
www.rohm.com  
©2017- ROHMCo., Ltd.All rights reserved.  
1/5  
2019/05/28_Rev.003  

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