Datasheet > R6003JND4

R6003JND4

更新时间： 2024-11-07 15:18:59

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
14页	2377K
描述
R6003JND4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching appl

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R6003JND4 数据手册

R6003JND4

Nch 600V 1.3A Power MOSFET

Datasheet

llOutline

SOT-223-3

V_DSS

600V

2.15Ω

±1.3A

7.8W

R_DS(on)(Max.)

I_D

P_D

llFeatures

llInner circuit

1) Fast reverse recovery time (trr)

2) Low on-resistance

3) Fast switching speed

4) Drive circuits can be simple

5) Pb-free plating ; RoHS compliant

llApplication

llPackaging specifications

Switching

Packing

Embossed Tape

TL1

Packing code

Marking

R6003JND4

4000

Quantity (pcs)

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Parameter

Drain - Source voltage

Symbol

Value

600

Unit

V_DSS

Continuous drain current (T_c= 25°C)

I_D

±1.3

I_DP

Pulsed drain current

±6.0

V_GSS

Gate - Source voltage

±30

I_AS

Avalanche current, single pulse

Avalanche energy, single pulse

Power dissipation (T_c= 25°C)

0.8

E_AS

℃

P_D

T_j

7.8

Junction temperature

150

T_stg

Operating junction and storage temperature range

-55 to +150

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20231010 - Rev.003

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