Datasheet > R6006ANX_12

R6006ANX_12

更新时间： 2024-01-27 07:59:36

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
14页	1683K
描述
Nch 600V 6A Power MOSFET

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中文翻译

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数据手册

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R6006ANX_12 数据手册

R6006ANX

Nch 600V 6A Power MOSFET

Datasheet

lOutline

V_DSS

600V

1.2W

TO-220FM

R_DS(on)(Max.)

I_D

P_D

40W

(1)(2)(3)

lFeatures

lInner circuit

1) Low on-resistance.

(1) Gate

(2) Drain

2) Fast switching speed.

3) Gate-source voltage (V_GSS) guaranteed to be 30V.

4) Drive circuits can be simple.

(3) Source

*1 Body Diode

5) Parallel use is easy.

6) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Packing

Bulk

Reel size (mm)

Tape width (mm)

Type

lApplication

Basic ordering unit (pcs)

500

Switching Power Supply

Taping code

Marking

R6006ANX

lAbsolute maximum ratings (T_a= 25C)

Parameter

Symbol

Value

Unit

V_DSS

Drain - Source voltage

600

T_c= 25C

Continuous drain current

T_c= 100C

I_D

6

2.9

24

I_D

Pulsed drain current

I_D,pulse

V_GSS

Gate - Source voltage

30

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current

2.4

E_AS

E_AR

I_AR

1.9

P_D

T_j

Power dissipation (T_c= 25C)

Junction temperature

150

C

V/ns

T_stg

dv/dt ^*5

Range of storage temperature

Reverse diode dv/dt

-55 to +150

www.rohm.com

2012.01 - Rev.B

1/13

12 3 4 5 6 7...14

中文翻译

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