Datasheet > R6007ENJ

R6007ENJ

更新时间： 2023-09-03 20:31:05

品牌	Logo	应用领域
罗姆 - ROHM		晶体管场效应晶体管
页数	文件大小	规格书
15页	1547K
描述
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。

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中文翻译

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数据手册

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R6007ENJ 数据手册

R6007ENJ

ꢀꢀNch 600V 7A Power MOSFET

Datasheet

ꢀꢀ

llOutline

ꢀ

TO-263S

V_DSS

600V

0.62Ω

±7A

SC-83

R_DS(on)(Max.)

LPT(S)

I_D

P_D

78W

ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

llInner circuit

llFeatures

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage (V

ꢀꢀbe ±20V.

) guaranteed to

GSS

4) Drive circuits can be simple.

5) Parallel use is easy.

6) Pb-free lead plating ; RoHS compliant

llPackaging specifications

Embossed

Tape

Packing

Reel size (mm)

330

llApplication

Tape width (mm)

Quantity (pcs)

Taping code

Marking

Type

Switching

1000

R6007ENJ

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Parameter

Drain - Source voltage

Symbol

Value

Unit

V_DSS

600

±7

T = 25°C

I_D

Continuous drain current

Pulsed drain current

T = 100°C

I_D

±3.8

±14

I_DP

static

±20

V_GSS

I_AR

Gate - Source voltage

AC(f＞1Hz)

±30

Avalanche current, repetitive

Avalanche energy, single pulse

Avalanche energy, repetitive

1.3

E_AS

133

℃

E_AR

0.20

Power dissipation (T = 25°C)

P_D

T_j

Junction temperature

150

T_stg

Operating junction and storage temperature range

-55～+150

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www.rohm.com

ꢀ ꢀ

1/12

20190527 - Rev.003

12 3 4 5 6 7...15

中文翻译

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