Datasheet > R6007KND3

R6007KND3

更新时间： 2024-03-03 10:11:12

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
15页	2337K
描述
R6007KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

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R6007KND3 数据手册

R6007KND3

Nch 600V 7A Power MOSFET

Datasheet

llOutline

TO-252

V_DSS

600V

0.62Ω

±7A

R_DS(on)(Max.)

I_D

P_D

78W

llFeatures

llInner circuit

1) Low on-resistance

2) Ultra fast switching speed

3) Parallel use is easy

4) Pb-free plating ; RoHS compliant

llApplication

llPackaging specifications

Switching

Packing

Embossed Tape

TL1

Packing code

Marking

R6007K

2500

Basic ordering unit (pcs)

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Parameter

Drain - Source voltage

Symbol

Value

600

Unit

V_DSS

Continuous drain current (T_c= 25°C)

Pulsed drain current

I_D

±7

I_DP

±21

static

±20

V_GSS

Gate - Source voltage

AC(f＞1Hz)

±30

I_AS

Avalanche current, single pulse

Avalanche energy, single pulse

Power dissipation (T_c= 25°C)

Junction temperature

1.3

E_AS

133

℃

P_D

T_j

150

T_stg

Operating junction and storage temperature range

-55 to +150

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20180906 - Rev.001

12 3 4 5 6 7...15

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