R6007KNX
ꢀꢀNch 600V 7A Power MOSFET
Datasheet
ꢀꢀ
llOutline
ꢀ
VDSS
600V
0.62Ω
±7A
RDS(on)(Max.)
TO-220FM
ID
ꢀ
PD
46W
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llInner circuit
llFeatures
1) Low on-resistance
2) Ultra fast switching
3) Parallel use is easy
4) Pb-free plating ; RoHS compliant
llPackaging specifications
Code
Packing
Tube
C7 G
C7
llApplication
Tube*
Bulk*
Switching
- (Blank)
*Package dimensions are different
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)
a
Parameter
Drain - Source voltage
Symbol
Value
600
Unit
V
VDSS
*1
ID
Continuous drain current
Pulsed drain current
±7
A
*2
IDP
±21
A
static
±20
V
VGSS
IAS
Gate - Source voltage
AC(f>1Hz)
±30
V
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation (Tc = 25°C)
1.3
A
*3
EAS
133
mJ
W
℃
℃
PD
Tj
46
Junction temperature
150
Tstg
Operating junction and storage temperature range
-55 to +150
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20200203 - Rev.004