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R6009JNJ PDF预览

R6009JNJ

更新时间: 2024-01-07 00:36:07
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
14页 1486K
描述
R6009JNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

R6009JNJ 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.65峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

R6009JNJ 数据手册

 浏览型号R6009JNJ的Datasheet PDF文件第2页浏览型号R6009JNJ的Datasheet PDF文件第3页浏览型号R6009JNJ的Datasheet PDF文件第4页浏览型号R6009JNJ的Datasheet PDF文件第5页浏览型号R6009JNJ的Datasheet PDF文件第6页浏览型号R6009JNJ的Datasheet PDF文件第7页 
R6009JNJ  
ꢀꢀNch 600V 9A Power MOSFET  
Datasheet  
ꢀꢀ  
llOutline  
LPT(S)  
VDSS  
600V  
0.585Ω  
±9A  
RDS(on)(Max.)  
ID  
PD  
125W  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
llFeatures  
llInner circuit  
1) Fast reverse recovery time (trr)  
2) Low on-resistance  
3) Fast switching speed  
4) Drive circuits can be simple  
5) Pb-free plating ; RoHS compliant  
llApplication  
llPackaging specifications  
Switching  
Packing  
Embossed Tape  
TL  
Packing code  
Marking  
R6009JNJ  
1000  
Quantity (pcs)  
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)  
a
Parameter  
Drain - Source voltage  
Symbol  
Value  
600  
Unit  
V
VDSS  
*1  
Continuous drain current (Tc = 25°C)  
ID  
±9  
A
*2  
IDP  
Pulsed drain current  
±27  
A
VGSS  
Gate - Source voltage  
±30  
V
*3  
IAS  
Avalanche current, single pulse  
Avalanche energy, single pulse  
Power dissipation (Tc = 25°C)  
1.8  
A
*3  
EAS  
177  
mJ  
W
PD  
Tj  
125  
Junction temperature  
150  
Tstg  
Operating junction and storage temperature range  
-55 to +150  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
1/11  
20190527 - Rev.002  
© 2019 ROHMCo., Ltd. All rights reserved.  

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