Datasheet > R6006AND

R6006AND

更新时间： 2024-11-09 09:39:39

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	1162K
描述
10V Drive Nch MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

R6006AND 数据手册

Data Sheet

10V Drive Nch MOSFET

R6006AND

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

CPT3

(SC-63)

<SOT-428>

6.5

5.1

2.3

0.5

Features

1) Low on-resistance.

2) High-speed switching.

3) Wide SOA.

0.75

0.9 2.3

0.65

2.3

(1) Gate

(2) Drain

(3) Source

(1)

(2)

(3)

0.5

1.0

4) Drive circuits can be simple.

5) Parallel use is easy.

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

Type

Code

∗1

Basic ordering unit (pieces)

2500



R6006AND

(1) Gate

(1)

(2)

(3)

(2) Drain

(3) Source

1 BODY DIODE

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

Limits

Unit

V_DSS

V_GSS

I_D

600

Gate-source voltage

30

Continuous

Pulsed

6

Drain current

I_DP

24

Continuous

Pulsed

I_S

Source current

(Body Diode)

I_SP

Avalanche current

Avalanche energy

Power dissipation

Channel temperature

I_AS

2.4

E_AS

P_D

C

T_ch

T_stg

150

Range of storage temperature

55 to 150

*1 Pw10s, Duty cycle1%

*2 L 500H, V_DD=50V, R_G=25, T_ch=25C

*3 Limited only by maximum temperature allowed.

*4 T_C=25C

 Thermal resistance

Parameter

Symbol

R_{th (ch-c)}

Limits

3.13

Unit

Channel to Case

C / W

www.rohm.com

2011.10 - Rev.A

1/5

12 3 4 5 6

中文翻译

下载PDF

与R6006AND相关器件

型号	品牌	获取价格	描述	数据表
R6006ANDTL	ROHM	获取价格	Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal
R6006ANX	ROHM	获取价格	10V Drive Nch MOSFET
R6006ANX_12	ROHM	获取价格	Nch 600V 6A Power MOSFET
R6006JND3	ROHM	获取价格	R6006JND3 is a power MOSFET with low on-resistance and fast switching, suitable for the sw
R6006JNJ	ROHM	获取价格	Power Field-Effect Transistor,
R6006JNX	ROHM	获取价格	R6006JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switchi
R6006JNXC7G	ROHM	获取价格	Power Field-Effect Transistor, 6A I(D), 600V, 0.936ohm, 1-Element, N-Channel, Silicon, Met
R6006KND3	ROHM	获取价格	R6006KND3是具有低导通电阻和高开关速度的功率MOSFET。适合开关应用。
R6006KND4	ROHM	获取价格	R6006KND4 is a power MOSFET with low on-resistance and fast switching, suitable for the sw
R6006KNX	ROHM	获取价格	R6006KNX是具有低导通电阻和高开关速度的功率MOSFET。适合开关应用。