Datasheet > R6004JND3

R6004JND3

更新时间： 2023-09-03 20:25:15

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
14页	1485K
描述
R6004JND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

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R6004JND3 数据手册

R6004JND3

ꢀꢀNch 600V 4A Power MOSFET

Datasheet

ꢀꢀ

llOutline

ꢀ

TO-252

V_DSS

600V

1.43Ω

±4A

ꢀ

R_DS(on)(Max.)

ꢀ

I_D

ꢀ

P_D

60W

ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

llFeatures

llInner circuit

1) Fast reverse recovery time (trr)

2) Low on-resistance

3) Fast switching speed

4) Drive circuits can be simple

5) Pb-free plating ; RoHS compliant

llApplication

llPackaging specifications

Switching

Packing

Embossed Tape

TL1

Packing code

Marking

R6004JND3

2500

Quantity (pcs)

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Parameter

Drain - Source voltage

Symbol

Value

600

Unit

V_DSS

Continuous drain current (T_c= 25°C)

I_D

±4

I_DP

Pulsed drain current

±12

V_GSS

Gate - Source voltage

±30

I_AS

Avalanche current, single pulse

Avalanche energy, single pulse

Power dissipation (T_c= 25°C)

1.0

E_AS

℃

P_D

T_j

Junction temperature

150

T_stg

Operating junction and storage temperature range

-55 to +150

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