Datasheet > QST9

QST9

更新时间： 2024-11-10 21:55:31

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
3页	108K
描述
General purpose amplification (−30V, −1A)

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中文翻译

获取价格

数据手册

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QST9 数据手册

QST9

Transistors

General purpose amplification (−30V, −1A)

QST9

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

2.8

1.6

zFeatures

1) Collector current is large.

2) Collector saturation voltage is low.

V^CE(sat): max. −350mV

At I^C= −500mA / IB = −25mA

ROHM : TSMT6

Each lead has same dimensions

Abbreviated symbol : T09

zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

−30

−6

Unit

(6)

(5)

(4)

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

−1

−2

500

Collector current

∗1

∗2

∗3

mW/TOTAL

W/TOTAL

Power dissipation

1.25

(1)

(2)

(3)

0.9

150

−55 to+150

W/ELEMENT

Junction temperature

Tstg

°C

Range of storage temperature

∗1 Single pulse, P

=1ms

∗2 Each Terminal Mounted on a Recommended

∗3 Mounted on a 25mm×25mm× 0.8mm ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BVCEO

BV^EBO

Min.

−30

−6

−

270

−

Typ.

Max.

−

Unit

Conditions

−

=−10µA

=−1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

E=−10µA

CBO

EBO

CE(sat)

−100

−350

680

−

MHz

CB=−30V

EB=−6V

Emitter cutoff current

−150

−

320

=−500mA, I =−25mA

Collector-emitter saturation voltage

DC current gain

∗

CE=−2V, I

C=−100mA

∗

CE=−2V, I

=100mA, f=100MHz

Transition frequency

CB=−10V, I

=0A, f=1MHz

Cob

−

Collector output capacitance

∗ Pulsed

Rev.A

1/2

12 3

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