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QSX2TR PDF预览

QSX2TR

更新时间: 2024-11-11 13:12:35
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罗姆 - ROHM /
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QSX2TR 数据手册

 浏览型号QSX2TR的Datasheet PDF文件第2页浏览型号QSX2TR的Datasheet PDF文件第3页 
QSX2  
Transistors  
General purpose amplification (30V, 5A)  
QSX2  
zExternal dimensions (Unit : mm)  
zApplication  
Low frequency amplifier  
2.8  
1.6  
zFeatures  
1) Collector current is large.  
2) Collector saturation voltage is low.  
VCE (sat)  
250mV  
at IC = 2A / IB = 40mA  
ROHM : TSMT6  
Each lead has same dimensions  
Abbreviated symbol : X02  
zEquivalent Circuit  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
30  
30  
6
Unit  
V
V
VCBO  
VCEO  
VEBO  
6pin 5pin  
4pin  
V
I
C
5
8
500  
A
A
Collector current  
Power dissipation  
1  
I
CP  
mW 2  
W
P
C
3  
1.25  
Tj  
Tstg  
150  
55 to +150  
°C  
°C  
Junction temperature  
Range of storage temperature  
1 Single pulse, Pw=1ms  
1pin 2pin  
3pin  
2 Each Terminal Mounted on a Recommended  
t
3 Mounted on a 25mm×25mm× 0.8mm Ceramic substrate  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO  
30  
30  
6
V
V
I
I
I
C
=10µA  
=1mA  
Collector-emitter breakdown voltage BVCEO  
C
Emitter-base breakdown voltage  
Collector cutoff current  
BVEBO  
V
E=10µA  
I
CBO  
EBO  
CE (sat)  
FE  
100  
100  
nA  
nA  
V
CB=30V  
Emitter cutoff current  
I
VEB=6V  
Collector-emitter saturation voltage  
DC current gain  
V
110 250 mV  
I
C
/ I  
B
=2A/40mA  
=2V / 500mA  
MHz VCE=2V, I  
= −500mA, f=100MHz∗  
pF CB=10V, I =0A, f=1MHz  
h
270  
680  
VCE / IC  
f
T
200  
60  
E
Transition frequency  
Collector output capacitance  
Pulsed  
Cob  
V
E
Rev.B  
1/2  

QSX2TR 替代型号

型号 品牌 替代类型 描述 数据表
QSX3TR ROHM

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Small Signal Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT6, 6

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