Datasheet > QPD1004SQ

QPD1004SQ

更新时间： 2024-12-02 01:06:07

品牌	Logo	应用领域
TRIQUINT		放大器光电二极管晶体管
页数	文件大小	规格书
20页	2457K
描述
25W, 50V, 30 â 1200 MHz, GaN RF Input-Matched Transistor

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QPD1004SQ 数据手册

QPD1004

25W, 50V, 30 – 1200 MHz, GaN RF Input-Matched Transistor

General Description

The QPD1004 is a 25W (P3dB), 50Ω-input matched

discrete GaN on SiC HEMT which operates from 30MHz

to 1200MHz on a 50V supply rail. The integrated input

matching network enables wideband gain and power

performance, while the output can be matched on board to

optimize power and efficiency for any region within the

band. It is ideally suited for basestation, radar and

communications applications and can support both CW

and pulsed mode of operations.

8 Pin DFN (6 xꢀ5ꢀxꢀ0.85ꢀmm)

The device is housed in an industry-standard 6 x 5 mm

surface mount DFN package.

Product Features

• Frequency: 30 to 1200 MHz

• Output Power (P_3dB): 40 W¹

• Linear Gain: 20.8 dB¹

Lead-free and ROHS compliant

• Typical PAE_3dB: 73.2%¹

• Operating Voltage: 50 V

• Low thermal resistance package

• CW and Pulse capable

• 6 x 5 mm package

Evaluation boards are available upon request.

Functional Block Diagram

Note 1: @ 1.0 GHz (Loadpull)

Applications

• Military radar

• Land mobile and military radio communications

• Test instrumentation

• Wideband or narrowband amplifiers

• Jammers

Ordering info

Part No.

ECCN Description

QPD1004S2

EAR99 2 Piece Sample Bag

QPD1004SQ

QPD1004SR

QPD1004EVB1

EAR99 25 Piece Sample Bag

EAR99 100 Piece 7” Reel

EAR99 30 –1000 MHz EVB

Rev. C

Disclaimer: Subject to change without notice

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