Datasheet > PXP6R1-30QL

PXP6R1-30QL

更新时间： 2024-09-21 11:15:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	321K
描述
30 V, P-channel Trench MOSFETProduction

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PXP6R1-30QL 数据手册

PXP6R1-30QL

30 V, P-channel Trench MOSFET

6 September 2021

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-

Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Logic-level compatible

•

Trench MOSFET technology

MLPAK33 package (3.3 x 3.3 mm footprint)

3. Applications

•

High-side load switch

Battery management

DC-to-DC conversion

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

-30

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-25

I_D

V_GS= -10 V; T_amb= 25 °C; t ≤ 5 s

[1]

-22.1

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -10 V; I_D= -13.4 A; T_j= 25 °C

V_GS= -4.5 V; I_D= -11.7 A; T_j= 25 °C

6.1

8.1

mΩ

6.4

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm².

12 3 4 5 6 7...14

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