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PXT2222A PDF预览

PXT2222A

更新时间: 2024-09-20 09:57:03
品牌 Logo 应用领域
美微科 - MCC 晶体放大器小信号双极晶体管开关
页数 文件大小 规格书
2页 174K
描述
0.5W NPN General Purpose Amplifier

PXT2222A 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.3
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PSSO-F3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):35 ns最大开启时间(吨):285 ns
Base Number Matches:1

PXT2222A 数据手册

 浏览型号PXT2222A的Datasheet PDF文件第2页 
M C C  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
PXT2222A  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
0.5W  
NPN General  
Purpose Amplifier  
·
Epoxy meets UL 94 V-0 flammability rating  
·
Moisure Sensitivity Level 1  
ICM: 0.6A  
xꢀ Operating and Storage Junction Temperatures: -55 to 150  
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Marking:1P  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
IBL  
Collector-Emitter Breakdown Voltage*  
(IC=10mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=10µAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=10µAdc, IC=0)  
40  
75  
Vdc  
Vdc  
SOT-89  
6.0  
Vdc  
nAdc  
nAdc  
A
K
Base Cutoff Current  
20  
10  
B
(VCE=60Vdc, VBE=3.0Vdc)  
Collector Cutoff Current  
(VCE=60Vdc, VBE=3.0Vdc)  
ICEX  
E
C
35  
50  
75  
100  
50  
40  
D
G
H
300  
J
F
C
0.3  
1.0  
Vdc  
Vdc  
0.6  
1.2  
2.0  
B
C
E
SMALL-SIGNAL CHARACTERISTICS  
fT  
Current Gain-Bandwidth Product  
(IC=20mAdc, VCE=20Vdc, f=100MHz)  
Output Capacitance  
(VCB=10Vdec, IE=0, f=1.0MHz)  
Input Capacitance  
(VBE=0.5Vdc, IC=0, f=1.0MHz)  
Noise Figure  
300  
MHz  
pF  
pF  
Cobo  
Cibo  
NF  
ꢈꢁꢇꢅꢂꢆꢁꢂꢆꢀ  
8.0  
ꢈꢁꢇꢀ  
ꢁꢂꢃꢄꢅꢆꢀ  
ꢇꢇꢀ  
ꢂꢋꢌꢅꢆꢀ  
ꢇꢉꢊꢀ  
ꢇꢁꢂꢀ  
ꢇꢁꢂꢀ  
ꢒꢍꢐꢓꢀ  
1.55  
ꢇꢉꢊꢀ  
ꢒꢍꢔꢕꢀ  
ꢚꢚꢚꢚꢚ  
ꢉꢀ  
ꢍꢎꢏꢐꢀ  
.061  
ꢍꢎꢑꢎꢀ  
ꢚꢚꢚꢚꢚ  
25  
REF.  
ꢃꢀ  
ꢈꢀ  
ꢅꢀ  
ꢙꢀ  
ꢝꢀ  
ꢄꢀ  
ꢞꢀ  
ꢍꢎꢗꢒꢀ  
ꢍꢕꢐꢎꢀ  
ꢍꢕꢓꢘꢀ  
ꢍꢎꢎꢑꢀ  
ꢍꢕꢎꢐꢀ  
ꢍꢕꢎꢗꢀ  
ꢍꢕꢎꢗꢀ  
ꢍꢕꢗꢗꢀ  
ꢍꢎꢔꢗꢀ  
ꢍꢕꢐꢓꢀ  
ꢍꢎꢕꢕꢀ  
ꢚꢚꢚꢚꢚꢀ  
ꢍꢕꢎꢓꢀ  
ꢍꢕꢘꢎꢀ  
ꢍꢕꢎꢔꢀ  
ꢍꢕꢔꢐꢀ  
ꢐꢍꢓꢎꢀ  
ꢕꢍꢑꢕꢀ  
ꢘꢍꢐꢒꢀ  
ꢐꢍꢕꢕꢀ  
ꢕꢍꢐꢐꢀ  
ꢕꢍꢐꢑꢀ  
ꢕꢍꢐꢑꢀ  
ꢎꢍꢒꢕꢀ  
ꢒꢍ25  
ꢎꢍꢕꢕꢀ  
ꢘꢍꢗꢒꢀ  
ꢚꢚꢚꢚꢚꢀ  
4.0  
dB  
(IC=100µAdc, VCE=10Vdc, RS=1.0kΩ  
f=1.0kHz)  
ꢌꢛꢜꢀ  
SWITCHING CHARACTERISTICS  
ꢕꢍꢒꢑꢀ  
ꢕꢍꢗꢐꢀ  
ꢕꢍꢒꢎꢀ  
ꢎꢍꢔꢕꢀ  
td  
tr  
ts  
tf  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
(VCC=30Vdc, VBE=0.5Vdc  
IC=150mAdc, IB1=15mAdc)  
(VCC=30Vdc, IC=150mAdc  
IB1=IB2=15mAdc)  
10  
25  
225  
60  
ns  
ns  
ns  
ns  
 ꢀ  
*Pulse Width 300µs, Duty Cycle2.0%  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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