Datasheet > PXT2907A

PXT2907A

更新时间： 2024-09-22 18:09:11

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	615K
描述
SOT-89

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中文翻译

获取价格

数据手册

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PXT2907A 数据手册

PXT2907A

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to PXT2222A

 Switching and Linear Amplification

 Low Voltage and High Current

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

-60

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-60

Emitter-Base Voltage

-5

Collector Current

Collector Power Dissipation

-600

500

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

250

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Symbo

Parameter

Min Typ Max Unit

Conditions

I_C=-1mA，I_E=0

I =-10mA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-60

-5

V(BR)CEO

V(BR)EBO

I_CBO

，

I_E=-1mA，I_C=0

V_CB=-60V, I_E=0

-0.01

Emitter cut-off current

I_EBO

uA V_EB=-5V, I_C=0

V_CE=-10V, I_C=-0.1mA

100

V_CE=-10V, I_C=-1mA

DC current gain

h_FE

V_CE=-10V, I_C=-10mA

V_CE=-10V, I_C=-150mA

V_CE=-10V, I_C=-500mA

I_C=-150mA，I_B=-15mA

I_C=-500mA，I_B=-50mA

I_C=-150mA，I_B=-15mA

I_C=-500mA，I_B=-50mA

300

-0.4

-1.6

-1.3

Collector-emitter saturation voltage

V_CE(sat)

V_BE(sat)

Base-emitter saturation voltage

-2.6

Delay time

Rise time

t_d

t_r

nS Vcc=-30V,Ic=-150mA,

I_B1=-I_B2=-15mA

Storage time

Fall time

t_s

t_f

300

V_CE=-10V,I_C=-20mA,f=100

Transition frequency

f_T

200

MHz

Marking: p2F

1 / 4

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