Datasheet > PXT3904

PXT3904

更新时间： 2024-11-18 18:09:39

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	534K
描述
SOT-89

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中文翻译

获取价格

数据手册

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PXT3904 数据手册

PXT3904

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to PXT3906

 Low Current

 Low Voltage

 Surface Mount device

MECHANICAL DATA

SOT-89



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

200

°C

500

Junction Temperature

Storage Temperature

150

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =10uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

，

V(BR)CEO

V(BR)EBO

I_CBO

I_C=1mA，I_B=0

I =10uA I =0

，

0.05

uA V_CB=30V, I_E=0

I_CEX

I_EBO

uA V_CE=30V, V_BE(OFF)=3V

uA V_EB=1V, I_C=0

V_CE=1V, I_C=0.1mA

V_CE=1V, I_C=1mA

DC current gain

h_FE

100

300

V_CE=1V, I_C=10mA

V_CE=1V, I_C=50mA

V_CE=6V, I_C=100mA

0.2

0.3

I_C=10mA，I_B=1mA

I_C=50mA，I_B=5mA

I_C=10mA，I_B=1mA

I_C=50mA，I_B=5mA

V_CE=20V,I_C=10mA,f=100

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.65

300

0.85

0.95

Transition frequency

Collector capacitance

Emitter capacitance

f_T

C_C

C_E

MHz

V_CB=5V, I_E=0, f=1

MHz

V_EB=0.5V, I_C=0, f=1

MHz

V_CE=5V,I_C=0.1mA,R_S=1k Ω ,

f=10Hz-15.7K

Noise figure

Delay time

Rise time

Storage time

Fall time

t_d

t_r

t_S

t_f

200

I_C=10mA，I_B1=-I_B2=1mA

Marking: 1A

1 / 4

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