Datasheet > PXT2907A

PXT2907A

更新时间： 2024-11-05 09:57:03

品牌	Logo	应用领域
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页数	文件大小	规格书
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描述
TRANSISTOR(PNP)

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中文翻译

获取价格

数据手册

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PXT2907A 数据手册

PXT290A7

TRANSISTOR(PNP)

SOT-89-3L

FEATURES

1. BASE

Switching and Linear Amplification

High Current and Low Voltage

Complement to PXT2222A

2. COLLECTOR

3. EMITTER

MARKING:p2F

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

Parameter

Collector-Base Voltage

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

-60

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Collector Current

-600

500

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

T_j

250

℃/W

℃

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-1mA,I_E=0

-60

-5

I_C=-10mA,I_B=0

I_E=-1mA,I_C=0

V_CB=-50V,I_E=0

-0.01

µA

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

V_CE=-10V, I_C=-0.1mA

V_CE=-10V, I_C=-1mA

V_CE=-10V, I_C=-10mA

V_CE=-10V, I_C=-150mA

V_CE=-10V, I_C=-500mA

I_C=-500mA,I_B=-50mA

I_C=-150mA,I_B=-15mA

I_C=-500mA,I_B=-50mA

I_C=-150mA,I_B=-15mA

100

DC current gain

h_FE

300

-1.6

-0.4

-2.6

-1.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

Delay time

t_d

t_r

MHz

V_CC=-30V, I_C=-150mA,

I_B1=- I_B2=-15mA

Rise time

Storage time

Fall time

t_s

t_f

300

Transition frequency

f_T

V_CE=-10V,I_C=-20mA, f=100MHz

200

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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