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PXT2222A PDF预览

PXT2222A

更新时间: 2024-09-21 14:53:31
品牌 Logo 应用领域
江苏长电/长晶 - CJ 开关晶体管
页数 文件大小 规格书
4页 1669K
描述
SOT-89-3L

PXT2222A 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Base Number Matches:1

PXT2222A 数据手册

 浏览型号PXT2222A的Datasheet PDF文件第2页浏览型号PXT2222A的Datasheet PDF文件第3页浏览型号PXT2222A的Datasheet PDF文件第4页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-89-3L Plastic-Encapsulate Transistors  
PXT2222A  
TRANSISTOR (NPN)  
SOT-89-3L  
FEATURES  
z
Epitaxial planar die construction  
1. BASE  
z
Complementary PNP Type available(PXT2907A)  
MARKING  
2. COLLECTOR  
3. EMITTER  
1 P  
Solid dot = Green molding compound device.  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
75  
VCBO  
40  
V
VCEO  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current -Continuous  
6
600  
V
mA  
Collector Power Dissipation  
0.5  
W
PC  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55 ~150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Min  
75  
40  
6
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 10μ A,IE=0  
IC= 10mA, IB=0  
V
IE=10μA, IC=0  
V
VCB=60V, IE=0  
0. 01  
0. 01  
μA  
μA  
Emitter cut-off current  
IEBO  
VEB= 5V , IC=0  
hFE(1)  
VCE=10V, IC= 0.1mA  
VCE=10V, IC= 1mA  
VCE=10V, IC= 10mA  
VCE=10V, IC= 150mA  
VCE=1V, IC= 150mA  
VCE=10V, IC= 500mA  
IC=500mA, IB= 50mA  
IC=150mA, IB=15mA  
IC=500mA, IB=50mA  
IC=150mA, IB=15mA  
35  
50  
hFE(2)  
hFE(3)  
75  
DC current gain  
hFE(4)  
100  
50  
300  
hFE(5)  
hFE(6)  
40  
VCE(sat)  
VCE(sat)  
VBE(sat)  
VBE(sat)  
1
V
V
V
V
Collector-emitter saturation voltage  
0.3  
2.0  
1.2  
Base-emitter saturation voltage  
Transition frequency  
0.6  
VCE=10V, IC=20mA  
f=100MHz  
fT  
300  
MHz  
Output Capacitance  
Delay time  
Cob  
td  
8
pF  
ns  
ns  
ns  
ns  
VCB=10V, IE= 0,f=1MHz  
10  
25  
225  
60  
VCC=30V, IC=150mA  
VBE(off)=0.5V,IB1=15mA  
Rise time  
tr  
Storage time  
Fall time  
tS  
tf  
VCC=30V, IC=150mA  
IB1=- IB2= 15mA  
www.jscj-elec.com  
1
Rev. - 2.2  

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