Datasheet > PXT2222A

PXT2222A

更新时间： 2024-11-08 09:57:03

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页数	文件大小	规格书
2页	782K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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PXT2222A 数据手册

PXT2222A

TRANSISTOR (NPN)

SOT-89

1. ^BASE

FEATURES

Epitaxial planar die construction

Complementary PNP Type available(PXT2907A)

2. ^COLLECTOR

3. ^EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

V_CEO

V_EBO

I_C

Emitter-Base Voltage

Collector Current -Continuous

600

Collector Power Dissipation

Junction Temperature

Storage Temperature

0.5

150

℃

P_C

T_J

-55 +150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 10μ A,I_E=0

I_C= 10mA, I_B=0

I_E=10μA, I_C=0

V_CB=60V, I_E=0

0. 01

μA

Emitter cut-off current

I_EBO

V_EB= 5V , I_C=0

h_FE(1)

V_CE=10V, I_C= 0.1mA

V_CE=10V, I_C= 1mA

V_CE=10V, I_C= 10mA

V_CE=10V, I_C= 150mA

V_CE=1V, I_C= 150mA

V_CE=10V, I_C= 500mA

I_C=500mA, I_B= 50mA

I_C=150mA, I_B=15mA

I_C=500mA, I_B=50mA

I_C=150mA, I_B=15mA

h_FE(2)

h_FE(3)

DC current gain

h_FE(4)

100

300

h_FE(5)

h_FE(6)

V_CE(sat)

V_BE(sat)

Collector-emitter saturation voltage

0.3

2.0

1.2

Base-emitter saturation voltage

Transition frequency

0.6

V_CE=10V, I_C=20mA

f=100MHz

f_T

300

MHz

Output Capacitance

Delay time

C_ob

t_d

V_CB=10V, I_E= 0,f=1MHz

225

V_CC=30V, I_C=150mA

_BE(off)=0.5V,I_B1=15mA

_CC=30V, I_C=150mA

Rise time

t_r

Storage time

Fall time

t_S

t_f

I_B1=- I_B2= 15mA

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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