5秒后页面跳转
PXT2222A PDF预览

PXT2222A

更新时间: 2024-11-08 20:26:27
品牌 Logo 应用领域
鲁光 - LGE 开关晶体管
页数 文件大小 规格书
3页 1553K
描述
暂无描述

PXT2222A 技术参数

极性:NPNCollector-emitter breakdown voltage:40
Collector Current - Continuous:0.6DC current gain - Min:100
DC current gain - Max:300Transition frequency:300
Package:SOT-89Storage Temperature Range:-55-150
class:Transistors

PXT2222A 数据手册

 浏览型号PXT2222A的Datasheet PDF文件第2页浏览型号PXT2222A的Datasheet PDF文件第3页 
PXT2222A  
SOT-89 Transistor(NPN)  
1. BASE  
SOT-89  
2. COLLECTOR  
3. EMITTER  
1
4.6  
B
4.4  
1.6  
1.4  
2
1.8  
1.4  
3
Features  
2.6  
4.25  
2.4  
3.75  
—
—
Epitaxial planar die construction  
Complementary PNP Type available(PXT2907A)  
0.8  
MIN  
0.53  
0.40  
0.48  
2x)  
0.35  
1.5  
0.44  
0.37  
0.13  
B
3.0  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Dimensions in inches and (millimeters)  
Symbol  
VCBO  
Parameter  
Value  
75  
Units  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
V
40  
VCEO  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current -Continuous  
6
600  
V
mA  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
0.5  
150  
W
PC  
TJ  
-55 +150  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
75  
40  
6
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 10μ A,IE=0  
IC= 10mA, IB=0  
V
IE=10μA, IC=0  
V
VCB=60V, IE=0  
0. 01  
0. 01  
μA  
μA  
Emitter cut-off current  
IEBO  
VEB= 5V , IC=0  
hFE(1)  
VCE=10V, IC= 0.1mA  
VCE=10V, IC= 1mA  
VCE=10V, IC= 10mA  
VCE=10V, IC= 150mA  
VCE=1V, IC= 150mA  
VCE=10V, IC= 500mA  
IC=500mA, IB= 50mA  
IC=150mA, IB=15mA  
IC=500mA, IB=50mA  
IC=150mA, IB=5mA  
35  
50  
hFE(2)  
hFE(3)  
75  
DC current gain  
hFE(4)  
100  
50  
300  
hFE(5)  
hFE(6)  
40  
VCE(sat)  
VCE(sat)  
VBE(sat)  
VBE(sat)  
1
V
V
V
V
Collector-emitter saturation voltage  
0.3  
2.0  
1.2  
Base-emitter saturation voltage  
Transition frequency  
0.6  
VCE=10V, IC=20mA  
f=100MHz  
fT  
300  
MHz  
Output Capacitance  
Delay time  
Cob  
td  
8
pF  
nS  
nS  
nS  
nS  
VCB=10V, IE= 0,f=1MHz  
10  
25  
225  
60  
VCC=30V, IC=150mA  
VBE(off)=0.5V,IB1=15mA  
Rise time  
tr  
Storage time  
Fall time  
tS  
tf  
VCC=30V, IC=150mA  
IB1=- IB2= 15mA  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

与PXT2222A相关器件

型号 品牌 获取价格 描述 数据表
PXT2222A(SOT-89) CJ

获取价格

Transistor
PXT2222A-T MCC

获取价格

Transistor
PXT2222AT/R ETC

获取价格

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | SOT-89
PXT2222A-TAPE-13 NXP

获取价格

TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
PXT2222A-TAPE-7 NXP

获取价格

TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
PXT2222A-TP MCC

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
PXT2222ATRL NXP

获取价格

暂无描述
PXT2222ATRL13 NXP

获取价格

TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
PXT2222-TAPE-13 NXP

获取价格

TRANSISTOR 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
PXT2222-TAPE-7 NXP

获取价格

TRANSISTOR 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa