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PXP8R3-20QX PDF预览

PXP8R3-20QX

更新时间: 2024-11-09 11:13:07
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
14页 312K
描述
20 V, P-channel Trench MOSFETProduction

PXP8R3-20QX 数据手册

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PXP8R3-20QX  
20 V, P-channel Trench MOSFET  
6 September 2021  
Product data sheet  
1. General description  
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-  
Mounted Device (SMD) plastic package using Trench MOSFET technology.  
2. Features and benefits  
Low threshold voltage  
Trench MOSFET technology  
MLPAK33 package (3.3 x 3.3 mm footprint)  
3. Applications  
High-side load switch  
Battery management  
DC-to-DC conversion  
Switching circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Typ  
Max  
-20  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
VGS  
-12  
-
12  
V
ID  
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s  
[1]  
-20.2  
A
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = -4.5 V; ID = -12.3 A; Tj = 25 °C  
VGS = -2.5 V; ID = -9.7 A; Tj = 25 °C  
-
-
6.6  
9.6  
8.3  
mΩ  
mΩ  
13.3  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.  
 
 
 
 
 

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