Datasheet > PXT2222A

PXT2222A

更新时间： 2024-11-09 17:00:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	377K
描述
40V,0.6A,General Purpose NPN Bipolar Transistor

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中文翻译

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数据手册

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PXT2222A 数据手册

NPN Silicon Epitaxial Planar Transistor

PXT2222A

Features



Epitaxial planar die construction

Complimentary to PXT2907A

High current

Low voltage

Mechanical Data



Case: SOT-89

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-89

Ordering Information

Part Number

Package

SOT-89

Shipping Quantity

Marking Code

PXT2222A

1000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Collector-Base Breakdown Voltage

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Continuous Collector Current

Peak Collector Current

0.6

0.8

0.15

0.2

I_CM

Continuous Base Current

Peak Base Current

I_B

I_BM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation

P_D

R_θJA

R_θJC

R_θJL

T_A

1.25

100

C/W

°C

Thermal Resistance (Junction-to-Ambient) ^*1

Thermal Resistance (Junction-to-Case) ^*1

Thermal Resistance (Junction-to-Lead) ^*1

Ambient Temperature

-55 ~ +150

-65 ~ +150

Operating junction Temperature

Storage Temperature Range

T_J

°C

T_STG

°C

Note 1: The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

STM0156A: October 2023 [2.0]

www.gmesemi.com

12 3 4 5

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