Datasheet > PSMN012-100YS,115

PSMN012-100YS,115

更新时间： 2024-01-24 15:01:29

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
15页	218K
描述
PSMN012-100YS - N-channel 100V 12mΩ standard level MOSFET in LFPAK SOIC 4-Pin

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中文翻译

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技术参数
数据手册
替代型号

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PSMN012-100YS,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	针数：	4
Reach Compliance Code：	not_compliant	风险等级：	5.73
Base Number Matches：	1

PSMN012-100YS,115 数据手册

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PSMN012-100YS

N-channel 100V 12mΩ standard level MOSFET in LFPAK

Rev. 04 — 23 February 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

Improved mechanical and thermal

RDSon and low gate charge

characteristics

High efficiency gains in switching

LFPAK provides maximum power

power converters

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

100

drain current

T_mb= 25 °C; see Figure 1

T_mb= 25 °C; see Figure 2

P_tot

total power

dissipation

130

T_j

junction temperature

-55

175

170

°C

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 60 A; V_sup≤ 100 V;

R_GS= 50 Ω; unclamped

avalanche energy

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 45 A;

V_DS= 50 V; see Figure 14

and 15

Q_G(tot)

12 3 4 5 6 7...15

中文翻译

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PSMN012-100YS,115 替代型号

型号	品牌	替代类型	描述	数据表
HAT2174H-EL-E	RENESAS	功能相似	Silicon N Channel Power MOS FET Power Switching

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