生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-CSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 17 A |
最大漏源导通电阻: | 0.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PPF9140J | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF9140JE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF9140M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF9140ME3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF9230E | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met | |
PPF9230EE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met | |
PPF9230G | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal | |
PPF9230GE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal | |
PPF9240J | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Met | |
PPF9240JE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Met |