是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-257AB |
包装说明: | FLANGE MOUNT, S-XSFM-P3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.92 | 配置: | SINGLE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 17 A |
最大漏源导通电阻: | 0.014 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AB | JESD-30 代码: | S-XSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PPFL2203M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
PPFL2203ME3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
PPFL3103E | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 56A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
PPFL3103G | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
PPFL3103GE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
PPFL3803M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me | |
PPFL3803ME3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me | |
PPFP | HAMMOND |
获取价格 |
Panneau pour ventilateur | |
PPFP190802 | HAMMOND |
获取价格 |
DATA SUBJECT TO CHANGE WITHOUT NOTLCE | |
PPFP190802BK1 | HAMMOND |
获取价格 |
DATA SUBJECT TO CHANGE WITHOUT NOTLCE |