生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, S-XSFM-P3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SINGLE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 9.4 A |
最大漏源导通电阻: | 0.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AB | JESD-30 代码: | S-XSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PPF9240M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta | |
PPF9240ME3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta | |
PPFC30E | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
PPFC30EE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
PPFC30G | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
PPFC30GE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
PPFC40JE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
PPFC40M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
PPFC40ME3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
PPFG50M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Meta |