是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-254AA |
包装说明: | FLANGE MOUNT, S-XSFM-P3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.92 |
配置: | SINGLE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 6.2 A | 最大漏源导通电阻: | 1.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-XSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PPFC40ME3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
PPFG50M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Meta | |
PPFG50ME3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Meta | |
PPFL2203G | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta | |
PPFL2203GE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta | |
PPFL2203J | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Met | |
PPFL2203M | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
PPFL2203ME3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
PPFL3103E | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 56A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
PPFL3103G | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta |