5秒后页面跳转
PMN28UN,165 PDF预览

PMN28UN,165

更新时间: 2024-11-05 15:48:11
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
13页 207K
描述
N-channel TrenchMOS ultra low level FET TSOP 6-Pin

PMN28UN,165 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TSOP包装说明:PLASTIC, SC-74, TSOP-6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.16Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:12 V
最大漏极电流 (Abs) (ID):5.7 A最大漏极电流 (ID):5.7 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.75 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PMN28UN,165 数据手册

 浏览型号PMN28UN,165的Datasheet PDF文件第2页浏览型号PMN28UN,165的Datasheet PDF文件第3页浏览型号PMN28UN,165的Datasheet PDF文件第4页浏览型号PMN28UN,165的Datasheet PDF文件第5页浏览型号PMN28UN,165的Datasheet PDF文件第6页浏览型号PMN28UN,165的Datasheet PDF文件第7页 
Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,  
use http://www.nexperia.com  
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use  
salesaddresses@nexperia.com (email)  
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
the version, as shown below:  
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and  
understanding,  
Kind regards,  
Team Nexperia  

PMN28UN,165 替代型号

型号 品牌 替代类型 描述 数据表
PMV31XN NXP

功能相似

UTrenchMOS extremely low level FET

与PMN28UN,165相关器件

型号 品牌 获取价格 描述 数据表
PMN28UNE NEXPERIA

获取价格

20 V, N-channel Trench MOSFETProduction
PMN30ENEA NEXPERIA

获取价格

40 V N-channel Trench MOSFETProduction
PMN30UN NEXPERIA

获取价格

30 V, N-channel Trench MOSFETProduction
PMN30UNE NEXPERIA

获取价格

20 V, N-channel Trench MOSFETProduction
PMN30UNEX ETC

获取价格

MOSFET N-CH 20V SC-74
PMN30XP NEXPERIA

获取价格

20 V, P-channel Trench MOSFETProduction
PMN30XPA NEXPERIA

获取价格

20 V, P-channel Trench MOSFETProduction
PMN30XPE NEXPERIA

获取价格

20 V, P-channel Trench MOSFETProduction
PMN30XPEA NEXPERIA

获取价格

20 V, P-channel Trench MOSFETProduction
PMN-32% PT Type B CTS

获取价格

PMN-PT