PMN35EN

更新时间： 2024-11-21 12:13:03

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	823K
描述
30 V, 5.1 A N-channel Trench MOSFET

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PMN35EN 数据手册

PMN35EN

T457

30 V, 5.1 A N-channel Trench MOSFET

Rev. 1 — 20 July 2011

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 Logic-level compatible

 Very fast switching

 Trench MOSFET technology

1.3 Applications

 Relay driver

 Low-side load switch

 Switching circuits

 High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

[1]

I_D

V_GS= 10 V; T_amb= 25 °C

5.1

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 5.1 A; T_j= 25 °C

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

drain

gate

source

drain

mbb076

SOT457 (TSOP6)

12 3 4 5 6 7...15

中文翻译

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PMN35EN 替代型号

型号	品牌	替代类型	描述	数据表
SI3424DV-T1-E3	VISHAY	功能相似	TRANSISTOR 5000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET

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