Datasheet > PMN50EPE

PMN50EPE

更新时间： 2024-11-26 11:15:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	260K
描述
30 V, P-channel Trench MOSFETProduction

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PMN50EPE 数据手册

PMN50EPE

30 V, P-channel Trench MOSFET

16 April 2018

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-

Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Trench MOSFET technology

•

Logic-level compatible

Very fast switching

ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

•

Relay driver

High-speed line driver

High-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

-30

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= -10 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -10 V; I_D= -4.6 A; T_j= 25 °C

[1]

-6

Static characteristics

R_DSondrain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm².

12 3 4 5 6 7...15

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