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PMN50XP PDF预览

PMN50XP

更新时间: 2024-11-21 06:04:27
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
11页 150K
描述
P-channel TrenchMOS extremely low level FET

PMN50XP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SC-74
包装说明:PLASTIC, SC-74, TSOP-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.18Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):4.8 A最大漏极电流 (ID):4.8 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.2 W最大脉冲漏极电流 (IDM):19.4 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PMN50XP 数据手册

 浏览型号PMN50XP的Datasheet PDF文件第2页浏览型号PMN50XP的Datasheet PDF文件第3页浏览型号PMN50XP的Datasheet PDF文件第4页浏览型号PMN50XP的Datasheet PDF文件第5页浏览型号PMN50XP的Datasheet PDF文件第6页浏览型号PMN50XP的Datasheet PDF文件第7页 
PMN50XP  
P-channel TrenchMOS extremely low level FET  
Rev. 02 — 2 October 2007  
Product data sheet  
1. Product profile  
1.1 General description  
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a  
plastic package. This product is designed and qualified for use in computing,  
communications, consumer and industrial applications only.  
1.2 Features  
„ Low on-state losses  
„ Low threshold voltage  
1.3 Applications  
„ Battery management  
„ Battery powered portable equipment  
„ Low power DC to DC converters  
„ Load Switching  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
VDS  
ID  
drain-source voltage  
drain current  
Tj 25 °C; Tj 150 °C  
-
-
-
-
-20  
V
A
VGS = -4.5 V; Tsp = 25 °C;  
-4.8  
see Figure 1 and 3  
Dynamic characteristics  
QGD gate-drain charge  
VGS = -4.5 V; ID = -4.7 A;  
VDS = -10 V; Tj = 25 °C;  
see Figure 9 and 10  
-
-
1.3  
48  
-
nC  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = -4.5 V; ID = -2.8 A;  
Tj = 25 °C; see Figure 7 and 8  
60  
mΩ  

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